TPD1E1B04
分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 瞬态抑制二极管
描述: 采用 0402 封装、具有 6.3A 8/20us 浪涌和低钳位的 1pF、±3.6V、±30kV ESD 保护二极管
物料参数
| Package name: | DFN1006 |
| Peak pulse power (8/20 μs) (max) (W): | 50 |
| Vrwm (V): | 3.6 |
| Bi-/uni-directional: | Bi-directional |
| Number of channels: | 1 |
| IO capacitance (typ) (pF): | 1 |
| IEC 61000-4-2 contact (±V): | 30000 |
| IEC 61000-4-5 (A): | 6.3 |
| Clamping voltage (V): | 6.3 |
| Dynamic resistance (typ): | 0.15 |
| Interface type: | Audio, Ethernet, General purpose, LVDS, USB 2.0 |
| Breakdown voltage (min) (V): | 6.4 |
| IO leakage current (max) (nA): | 100 |
| Rating: | Catalog |
| Operating temperature range (°C): | -40 to 125 |
| Package name: | DFN1006 |
| Peak pulse power (8/20 μs) (max) (W): | 50 |
| Vrwm (V): | 3.6 |
| Bi-/uni-directional: | Bi-directional |
| Number of channels: | 1 |
| IO capacitance (typ) (pF): | 1 |
| IEC 61000-4-2 contact (±V): | 30000 |
| IEC 61000-4-5 (A): | 6.3 |
| Clamping voltage (V): | 6.3 |
| Dynamic resistance (typ): | 0.15 |
| Interface type: | Audio, Ethernet, General purpose, LVDS, USB 2.0 |
| Breakdown voltage (min) (V): | 6.4 |
| IO leakage current (max) (nA): | 100 |
| Rating: | Catalog |
| Operating temperature range (°C): | -40 to 125 |
